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APT24M120B2 APT24M120L 1200V, 24A, 0.68 Max N-Channel MOSFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. T-MaxTM TO-264 APT24M120B2 Single die MOSFET APT24M120L D G S FEATURES * Fast switching with low EMI/RFI * Low RDS(on) * Ultra low Crss for improved noise immunity * Low gate charge * Avalanche energy rated * RoHS compliant TYPICAL APPLICATIONS * PFC and other boost converter * Buck converter * Two switch forward (asymmetrical bridge) * Single switch forward * Flyback * Inverters Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive 1 Ratings 24 15 90 30 1875 12 Unit A V mJ A Thermal and Mechanical Characteristics Symbol PD RJC RCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight 0.22 6.2 10 1.1 -55 0.11 150 300 Min Typ Max 1040 0.12 Unit W C/W C 8-2006 050-8072 Rev A oz g in*lbf N*m Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com Static Characteristics Symbol VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS TJ = 25C unless otherwise specified Test Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 12A VGS = VDS, ID = 2.5mA VDS = 1200V VGS = 0V TJ = 25C TJ = 125C APT24M120B2_L Typ 1.41 0.55 4 -10 Max Unit V V/C V mV/C A nA Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Min 1200 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current 3 0.68 5 100 500 100 VGS = 30V Dynamic Characteristics Symbol gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf 4 TJ = 25C unless otherwise specified Test Conditions VDS = 50V, ID = 12A VGS = 0V, VDS = 25V f = 1MHz Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related Min Typ 27 8370 100 615 240 Max Unit S pF 5 VGS = 0V, VDS = 0V to 800V Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time VGS = 0 to 10V, ID = 12A, VDS = 600V Resistive Switching VDD = 800V, ID = 12A RG = 2.2 6 , VGG = 15V 125 260 42 120 45 27 145 42 nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD trr Qrr dv/dt Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Peak Recovery dv/dt Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Min D Typ Max 100 Unit A G S 200 1 1270 30 10 V ns C V/ns ISD = 12A, TJ = 25C, VGS = 0V ISD = 12A 3 diSD/dt = 100A/s, TJ = 25C ISD 12A, di/dt 1000A/s, VDD = 800V, TJ = 125C 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 26.04mH, RG = 2.2, IAS = 12A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -3.80E-7/VDS^2 + 4.62E-8/VDS + 6.57E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 050-8072 Rev A 8-2006 70 60 ID, DRAIN CURRENT (A) V GS = 10V 25 APT24M120B2_L T = 125C J ID, DRIAN CURRENT (A) TJ = -55C 20 V GS 50 40 30 20 10 0 TJ = 125C = 6, 7, 8 & 9V 15 5V TJ = 25C 10 5 4.5V TJ = 150C 30 25 20 15 10 5 0 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics NORMALIZED TO VGS = 10V @ 12A 0 0 30 25 20 15 10 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 3.0 2.5 2.0 1.5 1.0 0.5 90 80 ID, DRAIN CURRENT (A) 70 60 50 40 30 20 10 0 0 VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = -55C TJ = 25C TJ = 125C 0 25 50 75 100 125 150 0 -55 -25 TJ, JUNCTION TEMPERATURE (C) Figure 3, RDS(ON) vs Junction Temperature 35 30 8 7 6 5 4 3 2 1 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics Ciss 20,000 10,000 TJ = -55C TJ = 25C gfs, TRANSCONDUCTANCE C, CAPACITANCE (pF) 25 20 TJ = 125C 1000 15 10 5 0 0 2 12 10 8 6 4 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 14 100 Coss Crss 800 1000 1200 600 400 200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 0 90 ISD, REVERSE DRAIN CURRENT (A) 80 70 60 50 40 30 20 10 0 0 TJ = 25C TJ = 150C 10 16 VGS, GATE-TO-SOURCE VOLTAGE (V) 14 12 10 8 6 4 2 ID = 12A VDS = 240V VDS = 600V 050-8072 50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 0 1.2 1.0 0.8 0.6 0.4 0.2 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage Rev A 8-2006 VDS = 960V 200 100 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) I DM 200 100 I DM APT24M120B2_L 10 13s 100s 1ms 10 Rds(on) 13s 100s 1ms 1 Rds(on) 10ms 100ms 1 TJ = 150C TC = 25C 10ms 0.1 TJ = 125C TC = 75C DC line 1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area 0.1 Scaling for Different Case & Junction Temperatures: 100ms ID = ID(T = 25C)*(TJ - TC)/125 C DC line 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 1 TJ (C) 0.0474 Dissipated Power (Watts) 0.0178 0.103 0.636 0.0408 TC (C) 0.0316 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. Figure 11, Transient Thermal Impedance Model 0.14 Z JC, THERMAL IMPEDANCE (C/W) 0.12 D = 0.9 0.10 0.7 0.08 0.06 0.04 0.02 0 0.5 0.3 SINGLE PULSE 0.1 0.05 Note: ZEXT PDM t1 t2 Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t1 = Pulse Duration t 10-5 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 10-4 1.0 T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) e3 100% Sn Plated Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1.003) 26.49 (1.043) 4.50 (.177) Max. 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 8-2006 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain Source 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) Gate Drain Source Rev A 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. 050-8072 These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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